STW25N60M2-EP Pricing (USD) [37938PC Stock]
- 1 pcs$1.03581
- 600 pcs$1.03066
- Nimewo Pati:
- STW25N60M2-EP
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CHANNEL 600V 18A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STW25N60M2-EP electronic components. STW25N60M2-EP can be shipped within 24 hours after order. If you have any demands for STW25N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW25N60M2-EP Atribi pwodwi yo
Nimewo Pati :
STW25N60M2-EP
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CHANNEL 600V 18A TO247
Seri :
MDmesh™ M2-EP
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
188 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4.75V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
1090pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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