ZXMN2A02N8TA Pricing (USD) [105782PC Stock]
- 1 pcs$0.37148
- 500 pcs$0.34965
- Nimewo Pati:
- ZXMN2A02N8TA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN2A02N8TA electronic components. ZXMN2A02N8TA can be shipped within 24 hours after order. If you have any demands for ZXMN2A02N8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2A02N8TA Atribi pwodwi yo
Nimewo Pati :
ZXMN2A02N8TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 8.3A 8-SOIC
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 11A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18.9nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
1900pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.56W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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