TSM200N03DPQ33 RGG Pricing (USD) [536583PC Stock]
- 1 pcs$0.06893
- Nimewo Pati:
- TSM200N03DPQ33 RGG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET 2 N-CH 30V 20A 8PDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM200N03DPQ33 RGG electronic components. TSM200N03DPQ33 RGG can be shipped within 24 hours after order. If you have any demands for TSM200N03DPQ33 RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM200N03DPQ33 RGG Atribi pwodwi yo
Nimewo Pati :
TSM200N03DPQ33 RGG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET 2 N-CH 30V 20A 8PDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
RD sou (Max) @ Id, Vgs :
20 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
345pF @ 25V
Pouvwa - Max :
20W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PDFN (3x3)
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