Nimewo Pati :
RGTH00TS65DGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
IGBT 650V 85A 277W TO-247N
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
85A
Kouran - Pèseptè batman (Icm) :
200A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 50A
Td (on / off) @ 25 ° C :
39ns/143ns
Kondisyon egzamen an :
400V, 50A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
54ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N