Rohm Semiconductor - RGTH00TS65DGC11

KEY Part #: K6421770

RGTH00TS65DGC11 Pricing (USD) [18373PC Stock]

  • 1 pcs$2.24316
  • 10 pcs$2.00122
  • 25 pcs$1.80123
  • 100 pcs$1.64108
  • 250 pcs$1.48098
  • 500 pcs$1.32889
  • 1,000 pcs$1.06327

Nimewo Pati:
RGTH00TS65DGC11
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
IGBT 650V 85A 277W TO-247N.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Rohm Semiconductor RGTH00TS65DGC11 electronic components. RGTH00TS65DGC11 can be shipped within 24 hours after order. If you have any demands for RGTH00TS65DGC11, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGTH00TS65DGC11 Atribi pwodwi yo

Nimewo Pati : RGTH00TS65DGC11
Manifakti : Rohm Semiconductor
Deskripsyon : IGBT 650V 85A 277W TO-247N
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 85A
Kouran - Pèseptè batman (Icm) : 200A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Pouvwa - Max : 277W
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 94nC
Td (on / off) @ 25 ° C : 39ns/143ns
Kondisyon egzamen an : 400V, 50A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 54ns
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247N