Nimewo Pati :
CSD86330Q3D
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 2N-CH 25V 20A 8SON
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A
RD sou (Max) @ Id, Vgs :
9.6 mOhm @ 14A, 8V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
920pF @ 12.5V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-LSON (3.3x3.3)