Vishay Siliconix - SI1900DL-T1-E3

KEY Part #: K6524920

SI1900DL-T1-E3 Pricing (USD) [398557PC Stock]

  • 1 pcs$0.09280
  • 3,000 pcs$0.08766

Nimewo Pati:
SI1900DL-T1-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 30V 0.59A SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Rèkteur - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI1900DL-T1-E3 electronic components. SI1900DL-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1900DL-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1900DL-T1-E3 Atribi pwodwi yo

Nimewo Pati : SI1900DL-T1-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 30V 0.59A SC70-6
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 590mA
RD sou (Max) @ Id, Vgs : 480 mOhm @ 590mA, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 1.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 270mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SC-70-6 (SOT-363)