[3686PC Stock]
- Nimewo Pati:
- ZXMN3AM832TA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 2.9A 8MLP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN3AM832TA electronic components. ZXMN3AM832TA can be shipped within 24 hours after order. If you have any demands for ZXMN3AM832TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3AM832TA Atribi pwodwi yo
Nimewo Pati :
ZXMN3AM832TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 30V 2.9A 8MLP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.9A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
3.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
190pF @ 25V
Pouvwa - Max :
1.13W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-VDFN Exposed Pad
Pake Aparèy Founisè :
8-MLP (3x2)
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