RUM003N02T2L Pricing (USD) [982367PC Stock]
- 1 pcs$0.04162
- 8,000 pcs$0.04142
- Nimewo Pati:
- RUM003N02T2L
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 300MA VMT3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RUM003N02T2L electronic components. RUM003N02T2L can be shipped within 24 hours after order. If you have any demands for RUM003N02T2L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RUM003N02T2L Atribi pwodwi yo
Nimewo Pati :
RUM003N02T2L
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 20V 300MA VMT3
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4V
RD sou (Max) @ Id, Vgs :
1 Ohm @ 300mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
25pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VMT3
Pake / Ka :
SOT-723
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