DMN3030LFG-7 Pricing (USD) [490925PC Stock]
- 1 pcs$0.07534
- 2,000 pcs$0.03915
- Nimewo Pati:
- DMN3030LFG-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 30V PWRDI3333-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3030LFG-7 electronic components. DMN3030LFG-7 can be shipped within 24 hours after order. If you have any demands for DMN3030LFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3030LFG-7 Atribi pwodwi yo
Nimewo Pati :
DMN3030LFG-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V PWRDI3333-8
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
18 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17.4nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
751pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI3333-8
Pake / Ka :
8-PowerVDFN
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