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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT1003RBLLG

Microsemi Corporation - APT1003RBLLG

KEY Part #: K6409007

APT1003RBLLG Pricing (USD) [431PC Stock]

  • 1 pcs$5.21789
  • 10 pcs$4.69478
  • 100 pcs$3.86031
  • 500 pcs$3.23430
Nimewo Pati:
APT1003RBLLG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1000V 4A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Diodes - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT1003RBLLG electronic components. APT1003RBLLG can be shipped within 24 hours after order. If you have any demands for APT1003RBLLG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT1003RBLLG Atribi pwodwi yo

Nimewo Pati : APT1003RBLLG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1000V 4A TO-247
Seri : POWER MOS 7®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 694pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 139W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3

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