Infineon Technologies - IPI037N08N3GXKSA1

KEY Part #: K6417857

IPI037N08N3GXKSA1 Pricing (USD) [43628PC Stock]

  • 1 pcs$0.89621
  • 500 pcs$0.82224

Nimewo Pati:
IPI037N08N3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 80V 100A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPI037N08N3GXKSA1 electronic components. IPI037N08N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI037N08N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI037N08N3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPI037N08N3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 80V 100A
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 3.75 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 155µA
Chaje Gate (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8110pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 214W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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