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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NDFPD1N150CG

ON Semiconductor - NDFPD1N150CG

KEY Part #: K6393738

NDFPD1N150CG Pricing (USD) [53747PC Stock]

  • 1 pcs$0.72749
  • 10 pcs$0.65391
  • 100 pcs$0.52543
  • 500 pcs$0.43169
  • 1,000 pcs$0.33835
Nimewo Pati:
NDFPD1N150CG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 1500V 100MA TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in ON Semiconductor NDFPD1N150CG electronic components. NDFPD1N150CG can be shipped within 24 hours after order. If you have any demands for NDFPD1N150CG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDFPD1N150CG Atribi pwodwi yo

Nimewo Pati : NDFPD1N150CG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 1500V 100MA TO220
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 150 Ohm @ 50mA, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 4.2nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 80pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta), 20W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3 Full Pack

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