TSM130NB06CR RLG Pricing (USD) [267739PC Stock]
- 1 pcs$0.13815
- Nimewo Pati:
- TSM130NB06CR RLG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET SINGLE N-CHANNEL TRENCH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM130NB06CR RLG electronic components. TSM130NB06CR RLG can be shipped within 24 hours after order. If you have any demands for TSM130NB06CR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM130NB06CR RLG Atribi pwodwi yo
Nimewo Pati :
TSM130NB06CR RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET SINGLE N-CHANNEL TRENCH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta), 51A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2380pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 83W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)
Pake / Ka :
8-PowerTDFN
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