CSD13201W10 Pricing (USD) [674757PC Stock]
- 1 pcs$0.05482
- 3,000 pcs$0.04762
- Nimewo Pati:
- CSD13201W10
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 12V 1.6A 4DSBGA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD13201W10 electronic components. CSD13201W10 can be shipped within 24 hours after order. If you have any demands for CSD13201W10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13201W10 Atribi pwodwi yo
Nimewo Pati :
CSD13201W10
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 12V 1.6A 4DSBGA
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
34 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
462pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-DSBGA (1x1)
Pake / Ka :
4-UFBGA, DSBGA
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