DMG7N65SJ3 Pricing (USD) [97039PC Stock]
- 1 pcs$0.40294
- 75 pcs$0.37835
- Nimewo Pati:
- DMG7N65SJ3
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 501V 650V TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG7N65SJ3 electronic components. DMG7N65SJ3 can be shipped within 24 hours after order. If you have any demands for DMG7N65SJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG7N65SJ3 Atribi pwodwi yo
Nimewo Pati :
DMG7N65SJ3
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 501V 650V TO251
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
886pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3, IPak, Short Leads
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