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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDZ191P

ON Semiconductor - FDZ191P

KEY Part #: K6409726

FDZ191P Pricing (USD) [381673PC Stock]

  • 1 pcs$0.09739
  • 5,000 pcs$0.09691
Nimewo Pati:
FDZ191P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 20V 3A 6WLCSP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDZ191P electronic components. FDZ191P can be shipped within 24 hours after order. If you have any demands for FDZ191P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDZ191P Atribi pwodwi yo

Nimewo Pati : FDZ191P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 20V 3A 6WLCSP
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 85 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.9W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-WLCSP (1.0x1.5)
Pake / Ka : 6-UFBGA, WLCSP

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