Infineon Technologies - AUIRF7343QTR

KEY Part #: K6523198

AUIRF7343QTR Pricing (USD) [111089PC Stock]

  • 1 pcs$0.33295
  • 4,000 pcs$0.30541

Nimewo Pati:
AUIRF7343QTR
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF7343QTR Atribi pwodwi yo

Nimewo Pati : AUIRF7343QTR
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.7A, 3.4A
RD sou (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 740pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO