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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. APTC60AM70T1G

Microsemi Corporation - APTC60AM70T1G

KEY Part #: K6524337

[3865PC Stock]

    Nimewo Pati:
    APTC60AM70T1G
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET 2N-CH 600V 39A SP1.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTC60AM70T1G electronic components. APTC60AM70T1G can be shipped within 24 hours after order. If you have any demands for APTC60AM70T1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTC60AM70T1G Atribi pwodwi yo

    Nimewo Pati : APTC60AM70T1G
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET 2N-CH 600V 39A SP1
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Half Bridge)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 39A
    RD sou (Max) @ Id, Vgs : 70 mOhm @ 39A, 10V
    Vgs (th) (Max) @ Id : 3.9V @ 2.7mA
    Chaje Gate (Qg) (Max) @ Vgs : 259nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 7000pF @ 25V
    Pouvwa - Max : 250W
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : SP1
    Pake Aparèy Founisè : SP1

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