RQ3E100BNTB Pricing (USD) [871993PC Stock]
- 1 pcs$0.04689
- 3,000 pcs$0.04666
- Nimewo Pati:
- RQ3E100BNTB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 10A HSMT8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RQ3E100BNTB electronic components. RQ3E100BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100BNTB Atribi pwodwi yo
Nimewo Pati :
RQ3E100BNTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 30V 10A HSMT8
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1100pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HSMT (3.2x3)
Pake / Ka :
8-PowerVDFN
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