Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
FET Kalite :
N and P-Channel, Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.3A, 2.8A
RD sou (Max) @ Id, Vgs :
80 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
800pF @ 40V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Pake Aparèy Founisè :
TO-252-4L