Vishay Siliconix - SUM70040M-GE3

KEY Part #: K6418099

SUM70040M-GE3 Pricing (USD) [51526PC Stock]

  • 1 pcs$0.76265
  • 800 pcs$0.75885

Nimewo Pati:
SUM70040M-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 120A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SUM70040M-GE3 electronic components. SUM70040M-GE3 can be shipped within 24 hours after order. If you have any demands for SUM70040M-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUM70040M-GE3 Atribi pwodwi yo

Nimewo Pati : SUM70040M-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 120A D2PAK
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 7.5V, 10V
RD sou (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5100pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263-7
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)