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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. 2N7639-GA

GeneSiC Semiconductor - 2N7639-GA

KEY Part #: K6404287

2N7639-GA Pricing (USD) [2064PC Stock]

  • 10 pcs$146.91564
Nimewo Pati:
2N7639-GA
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 650V 15A TO-257.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor 2N7639-GA electronic components. 2N7639-GA can be shipped within 24 hours after order. If you have any demands for 2N7639-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7639-GA Atribi pwodwi yo

Nimewo Pati : 2N7639-GA
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 650V 15A TO-257
Seri : -
Estati Pati : Obsolete
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc) (155°C)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 105 mOhm @ 15A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 1534pF @ 35V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 172W (Tc)
Operating Tanperati : -55°C ~ 225°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-257
Pake / Ka : TO-257-3
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