Nimewo Pati :
TPC8110(TE12L,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 40V 8A SOP8 2-6J1B
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2180pF @ 10V
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP (5.5x6.0)
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)