CSD18563Q5AT Pricing (USD) [80886PC Stock]
- 1 pcs$0.55213
- 250 pcs$0.54938
- 1,250 pcs$0.31948
- Nimewo Pati:
- CSD18563Q5AT
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 60V 100A 8SON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD18563Q5AT electronic components. CSD18563Q5AT can be shipped within 24 hours after order. If you have any demands for CSD18563Q5AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD18563Q5AT Atribi pwodwi yo
Nimewo Pati :
CSD18563Q5AT
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 60V 100A 8SON
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.8 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1500pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.2W (Ta), 116W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSONP (5x6)
Pake / Ka :
8-PowerTDFN
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