IAUT200N08S5N023ATMA1 Pricing (USD) [42573PC Stock]
- 1 pcs$0.91844
- Nimewo Pati:
- IAUT200N08S5N023ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- 80V 200A 2.3MOHM TOLL.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - JFETs, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IAUT200N08S5N023ATMA1 electronic components. IAUT200N08S5N023ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUT200N08S5N023ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUT200N08S5N023ATMA1 Atribi pwodwi yo
Nimewo Pati :
IAUT200N08S5N023ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
80V 200A 2.3MOHM TOLL
Seri :
OptiMOS™-5
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
2.3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 130µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7670pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-1
Pake / Ka :
8-PowerSFN
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