Rohm Semiconductor - RSS085N05FU6TB

KEY Part #: K6408397

RSS085N05FU6TB Pricing (USD) [641PC Stock]

  • 2,500 pcs$0.28565

Nimewo Pati:
RSS085N05FU6TB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 45V 8.5A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - RF, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RSS085N05FU6TB Atribi pwodwi yo

Nimewo Pati : RSS085N05FU6TB
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 45V 8.5A 8-SOIC
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 45V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 18 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 21.4nC @ 5V
Vgs (Max) : 20V
Antre kapasite (Ciss) (Max) @ Vds : 1500pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOP
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)