Nimewo Pati :
IPB036N12N3GATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 120V 180A TO263-7
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Chaje Gate (Qg) (Max) @ Vgs :
211nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
13800pF @ 60V
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-7
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB