Infineon Technologies - IPC90N04S53R6ATMA1

KEY Part #: K6420793

IPC90N04S53R6ATMA1 Pricing (USD) [256321PC Stock]

  • 1 pcs$0.14544
  • 5,000 pcs$0.14471

Nimewo Pati:
IPC90N04S53R6ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 40V 90A 8TDSON-34.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPC90N04S53R6ATMA1 Atribi pwodwi yo

Nimewo Pati : IPC90N04S53R6ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 90A 8TDSON-34
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 7V, 10V
RD sou (Max) @ Id, Vgs : 3.6 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id : 3.4V @ 23µA
Chaje Gate (Qg) (Max) @ Vgs : 32.6nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1950pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 63W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8-34
Pake / Ka : 8-PowerTDFN