[3906PC Stock]
- Nimewo Pati:
- TPC8212-H(TE12LQ,M
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 6A SOP8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPC8212-H(TE12LQ,M electronic components. TPC8212-H(TE12LQ,M can be shipped within 24 hours after order. If you have any demands for TPC8212-H(TE12LQ,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8212-H(TE12LQ,M Atribi pwodwi yo
Nimewo Pati :
TPC8212-H(TE12LQ,M
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 30V 6A SOP8
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
21 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
840pF @ 10V
Pouvwa - Max :
450mW
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-SOP (5.5x6.0)
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