[8714PC Stock]
- Nimewo Pati:
- SI8416DB-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 8V 16A MICRO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI8416DB-T1-GE3 electronic components. SI8416DB-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI8416DB-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8416DB-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI8416DB-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 8V 16A MICRO
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4.5V
RD sou (Max) @ Id, Vgs :
23 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (Max) :
±5V
Antre kapasite (Ciss) (Max) @ Vds :
1470pF @ 4V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.77W (Ta), 13W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-microfoot
Pake / Ka :
6-UFBGA
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