ON Semiconductor - FDS4935BZ

KEY Part #: K6525188

FDS4935BZ Pricing (USD) [228502PC Stock]

  • 1 pcs$0.16187
  • 2,500 pcs$0.15600

Nimewo Pati:
FDS4935BZ
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2P-CH 30V 6.9A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolè (BJT) - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDS4935BZ electronic components. FDS4935BZ can be shipped within 24 hours after order. If you have any demands for FDS4935BZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS4935BZ Atribi pwodwi yo

Nimewo Pati : FDS4935BZ
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2P-CH 30V 6.9A 8-SOIC
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.9A
RD sou (Max) @ Id, Vgs : 22 mOhm @ 6.9A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1360pF @ 15V
Pouvwa - Max : 900mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC