Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2P-CH 30V 6.9A 8-SOIC
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.9A
RD sou (Max) @ Id, Vgs :
22 mOhm @ 6.9A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1360pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC