STB11N65M5 Pricing (USD) [65490PC Stock]
- 1 pcs$0.59705
- 1,000 pcs$0.53350
- Nimewo Pati:
- STB11N65M5
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N CH 650V 9A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STB11N65M5 electronic components. STB11N65M5 can be shipped within 24 hours after order. If you have any demands for STB11N65M5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB11N65M5 Atribi pwodwi yo
Nimewo Pati :
STB11N65M5
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N CH 650V 9A D2PAK
Seri :
MDmesh™ V
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
480 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
644pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
85W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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