STMicroelectronics - STGW35NC120HD

KEY Part #: K6421737

STGW35NC120HD Pricing (USD) [9018PC Stock]

  • 1 pcs$4.57006

Nimewo Pati:
STGW35NC120HD
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 1200V 60A 235W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Tiristors - SCR and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW35NC120HD electronic components. STGW35NC120HD can be shipped within 24 hours after order. If you have any demands for STGW35NC120HD, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW35NC120HD Atribi pwodwi yo

Nimewo Pati : STGW35NC120HD
Manifakti : STMicroelectronics
Deskripsyon : IGBT 1200V 60A 235W TO247
Seri : PowerMESH™
Estati Pati : Obsolete
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 135A
Vce (sou) (Max) @ Vge, Ic : 2.75V @ 15V, 20A
Pouvwa - Max : 235W
Oblije chanje enèji : 1.66mJ (on), 4.44mJ (off)
Kalite Antre : Standard
Gate chaje : 110nC
Td (on / off) @ 25 ° C : 29ns/275ns
Kondisyon egzamen an : 960V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 152ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3