Toshiba Semiconductor and Storage - TPW1R306PL,L1Q

KEY Part #: K6416465

TPW1R306PL,L1Q Pricing (USD) [66799PC Stock]

  • 1 pcs$0.59163
  • 5,000 pcs$0.58868

Nimewo Pati:
TPW1R306PL,L1Q
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPW1R306PL,L1Q Atribi pwodwi yo

Nimewo Pati : TPW1R306PL,L1Q
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : X35 PB-F POWER MOSFET TRANSISTOR
Seri : U-MOSIX-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 260A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8100pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 960mW (Ta), 170W (Tc)
Operating Tanperati : 175°C
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-DSOP Advance
Pake / Ka : 8-PowerVDFN