TPW1R306PL,L1Q Pricing (USD) [66799PC Stock]
- 1 pcs$0.59163
- 5,000 pcs$0.58868
- Nimewo Pati:
- TPW1R306PL,L1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPW1R306PL,L1Q Atribi pwodwi yo
Nimewo Pati :
TPW1R306PL,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Seri :
U-MOSIX-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
260A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8100pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
960mW (Ta), 170W (Tc)
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-DSOP Advance
Pake / Ka :
8-PowerVDFN
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