[3902PC Stock]
- Nimewo Pati:
- SIB914DK-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 8V 1.5A PPAK SC75-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIB914DK-T1-GE3 electronic components. SIB914DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB914DK-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIB914DK-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIB914DK-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A
RD sou (Max) @ Id, Vgs :
113 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.6nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
125pF @ 4V
Pouvwa - Max :
3.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SC-75-6L Dual
Pake Aparèy Founisè :
PowerPAK® SC-75-6L Dual
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