IXYS - IXTP110N055P

KEY Part #: K6417574

IXTP110N055P Pricing (USD) [34636PC Stock]

  • 1 pcs$1.31542
  • 50 pcs$1.30888

Nimewo Pati:
IXTP110N055P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 55V 110A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - RF, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXTP110N055P electronic components. IXTP110N055P can be shipped within 24 hours after order. If you have any demands for IXTP110N055P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP110N055P Atribi pwodwi yo

Nimewo Pati : IXTP110N055P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 55V 110A TO-220
Seri : PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 13.5 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 76nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2210pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 390W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3