Nimewo Pati :
FQB10N60CTM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 600V 9.5A D2PAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
730 mOhm @ 4.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
57nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2040pF @ 25V
Disipasyon Pouvwa (Max) :
3.13W (Ta), 156W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB