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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. BSH203,215

Nexperia USA Inc. - BSH203,215

KEY Part #: K6419339

BSH203,215 Pricing (USD) [858781PC Stock]

  • 1 pcs$0.04329
  • 3,000 pcs$0.04307
Nimewo Pati:
BSH203,215
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 30V 470MA SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. BSH203,215 electronic components. BSH203,215 can be shipped within 24 hours after order. If you have any demands for BSH203,215, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSH203,215 Atribi pwodwi yo

Nimewo Pati : BSH203,215
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 30V 470MA SOT23
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 470mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 280mA, 4.5V
Vgs (th) (Max) @ Id : 680mV @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 2.2nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 110pF @ 24V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 417mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-236AB
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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