TP65H050WS Pricing (USD) [5775PC Stock]
- 1 pcs$7.13493
- Nimewo Pati:
- TP65H050WS
- Manifakti:
- Transphorm
- Detaye deskripsyon:
- GANFET N-CH 650V 34A TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Transphorm TP65H050WS electronic components. TP65H050WS can be shipped within 24 hours after order. If you have any demands for TP65H050WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TP65H050WS Atribi pwodwi yo
Nimewo Pati :
TP65H050WS
Manifakti :
Transphorm
Deskripsyon :
GANFET N-CH 650V 34A TO247-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
34A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
12V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id :
4.8V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1000pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
119W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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