Manifakti :
IXYS Integrated Circuits Division
Deskripsyon :
MOSFET N-CH 600V SOT-223
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
0V
RD sou (Max) @ Id, Vgs :
44 Ohm @ 100mA, 0V
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
100pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
1.8W (Ta)
Operating Tanperati :
-55°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA