DMN2011UFX-7 Pricing (USD) [249522PC Stock]
- 1 pcs$0.14823
- 3,000 pcs$0.13172
- Nimewo Pati:
- DMN2011UFX-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 12.2A DFN2050-4.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2011UFX-7 electronic components. DMN2011UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2011UFX-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2011UFX-7 Atribi pwodwi yo
Nimewo Pati :
DMN2011UFX-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 12.2A DFN2050-4
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.2A (Ta)
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 10A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
56nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2248pF @ 10V
Pouvwa - Max :
2.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
4-VFDFN Exposed Pad
Pake Aparèy Founisè :
V-DFN2050-4
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