Infineon Technologies - IRF3717PBF

KEY Part #: K6411559

IRF3717PBF Pricing (USD) [13749PC Stock]

  • 95 pcs$0.47866

Nimewo Pati:
IRF3717PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 20V 20A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF3717PBF Atribi pwodwi yo

Nimewo Pati : IRF3717PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 20V 20A 8-SOIC
Seri : HEXFET®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.45V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2890pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)