ON Semiconductor - FDB14N30TM

KEY Part #: K6392662

FDB14N30TM Pricing (USD) [113103PC Stock]

  • 1 pcs$0.32702
  • 800 pcs$0.29949

Nimewo Pati:
FDB14N30TM
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 300V 14A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDB14N30TM electronic components. FDB14N30TM can be shipped within 24 hours after order. If you have any demands for FDB14N30TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB14N30TM Atribi pwodwi yo

Nimewo Pati : FDB14N30TM
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 300V 14A D2PAK
Seri : UniFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 290 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1060pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 140W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB