BSS192PH6327XTSA1 Pricing (USD) [485547PC Stock]
- 1 pcs$0.07656
- 1,000 pcs$0.07618
- Nimewo Pati:
- BSS192PH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 250V 190MA SOT89.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Tiristors - SCR and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSS192PH6327XTSA1 electronic components. BSS192PH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS192PH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS192PH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
BSS192PH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 250V 190MA SOT89
Seri :
SIPMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
190mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.8V, 10V
RD sou (Max) @ Id, Vgs :
12 Ohm @ 190mA, 10V
Vgs (th) (Max) @ Id :
2V @ 130µA
Chaje Gate (Qg) (Max) @ Vgs :
6.1nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
104pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT89
Pake / Ka :
TO-243AA
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