PHKD6N02LT,518 Pricing (USD) [3805PC Stock]
- 10,000 pcs$0.14100
- Nimewo Pati:
- PHKD6N02LT,518
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 10.9A SOT96-1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHKD6N02LT,518 electronic components. PHKD6N02LT,518 can be shipped within 24 hours after order. If you have any demands for PHKD6N02LT,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHKD6N02LT,518 Atribi pwodwi yo
Nimewo Pati :
PHKD6N02LT,518
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 10.9A SOT96-1
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.9A
RD sou (Max) @ Id, Vgs :
20 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.3nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
950pF @ 10V
Pouvwa - Max :
4.17W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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