STGP4M65DF2 Pricing (USD) [71938PC Stock]
- 1 pcs$0.51426
- 10 pcs$0.45991
- 100 pcs$0.33906
- 500 pcs$0.28010
- 1,000 pcs$0.22114
- Nimewo Pati:
- STGP4M65DF2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT M SERIES 650V 4A LOW LOSS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGP4M65DF2 electronic components. STGP4M65DF2 can be shipped within 24 hours after order. If you have any demands for STGP4M65DF2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGP4M65DF2 Atribi pwodwi yo
Nimewo Pati :
STGP4M65DF2
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT M SERIES 650V 4A LOW LOSS
Seri :
M
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
8A
Kouran - Pèseptè batman (Icm) :
16A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 4A
Pouvwa - Max :
68W
Oblije chanje enèji :
40µJ (on), 136µJ (off)
Kalite Antre :
Standard
Gate chaje :
15.2nC
Td (on / off) @ 25 ° C :
12ns/86ns
Kondisyon egzamen an :
400V, 4A, 47 Ohm, 15V
Ranvèse Tan Reverse (trr) :
133ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220AB
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