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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTLUF4189NZTBG

ON Semiconductor - NTLUF4189NZTBG

KEY Part #: K6406874

[1168PC Stock]

    Nimewo Pati:
    NTLUF4189NZTBG
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 30V 1.2A 6UDFN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTLUF4189NZTBG electronic components. NTLUF4189NZTBG can be shipped within 24 hours after order. If you have any demands for NTLUF4189NZTBG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTLUF4189NZTBG Atribi pwodwi yo

    Nimewo Pati : NTLUF4189NZTBG
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 30V 1.2A 6UDFN
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.2A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 200 mOhm @ 1.5A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 3nC @ 4.5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : 95pF @ 15V
    Karakteristik FET : Schottky Diode (Isolated)
    Disipasyon Pouvwa (Max) : 500mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 6-UDFN (1.6x1.6)
    Pake / Ka : 6-UFDFN Exposed Pad

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