[1189PC Stock]
- Nimewo Pati:
- SSM3K7002BSU,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 60V .2A USM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3K7002BSU,LF electronic components. SSM3K7002BSU,LF can be shipped within 24 hours after order. If you have any demands for SSM3K7002BSU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K7002BSU,LF Atribi pwodwi yo
Nimewo Pati :
SSM3K7002BSU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 60V .2A USM
Seri :
-
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.1 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
17pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
USM
Pake / Ka :
SC-70, SOT-323
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