Nimewo Pati :
SIA777EDJ-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V/12V SC70-6L
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V, 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A, 4.5A
RD sou (Max) @ Id, Vgs :
225 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.2nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SC-70-6 Dual
Pake Aparèy Founisè :
PowerPAK® SC-70-6 Dual