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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTGS3446T1G

ON Semiconductor - NTGS3446T1G

KEY Part #: K6393142

NTGS3446T1G Pricing (USD) [521387PC Stock]

  • 1 pcs$0.07094
  • 3,000 pcs$0.06087
Nimewo Pati:
NTGS3446T1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 2.5A 6TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTGS3446T1G electronic components. NTGS3446T1G can be shipped within 24 hours after order. If you have any demands for NTGS3446T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTGS3446T1G Atribi pwodwi yo

Nimewo Pati : NTGS3446T1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 2.5A 6TSOP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 750pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-TSOP
Pake / Ka : SOT-23-6

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